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IXTP7N60PM Datasheet

IXTP7N60PM Cover
DatasheetIXTP7N60PM
File Size111.83 KB
Total Pages4
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXTP7N60PM
Description MOSFET N-CH 600V 4A TO-220

IXTP7N60PM - IXYS

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IXTP7N60PM IXTP7N60PM IXYS MOSFET N-CH 600V 4A TO-220 439

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URL Link

IXTP7N60PM

IXYS

Manufacturer

IXYS

Series

Polar™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.1Ohm @ 3.5A, 10V

Vgs(th) (Max) @ Id

5.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

20nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1180pF @ 25V

FET Feature

-

Power Dissipation (Max)

41W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3