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Datasheet | IXTQ110N055P |
File Size | 254.77 KB |
Total Pages | 5 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IXTQ110N055P, IXTA110N055P, IXTP110N055P |
Description | MOSFET N-CH 55V 110A TO-3P, MOSFET N-CH 55V 110A TO-263, MOSFET N-CH 55V 110A TO-220 |
IXTQ110N055P - IXYS
![IXTQ110N055P Datasheet Page 1](http://media.zouser.com/zouser/datasheet/sm/ixtq110n055p-0001.jpg)
![IXTQ110N055P Datasheet Page 2](http://media.zouser.com/zouser/datasheet/sm/ixtq110n055p-0002.jpg)
![IXTQ110N055P Datasheet Page 3](http://media.zouser.com/zouser/datasheet/sm/ixtq110n055p-0003.jpg)
![IXTQ110N055P Datasheet Page 4](http://media.zouser.com/zouser/datasheet/sm/ixtq110n055p-0004.jpg)
![IXTQ110N055P Datasheet Page 5](http://media.zouser.com/zouser/datasheet/sm/ixtq110n055p-0005.jpg)
The Products You May Be Interested In
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IXTQ110N055P | IXYS | MOSFET N-CH 55V 110A TO-3P | 224 More on Order |
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IXTA110N055P | IXYS | MOSFET N-CH 55V 110A TO-263 | 335 More on Order |
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IXTP110N055P | IXYS | MOSFET N-CH 55V 110A TO-220 | 150 More on Order |
URL Link
Manufacturer IXYS Series PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 13.5mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2210pF @ 25V FET Feature - Power Dissipation (Max) 390W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |
Manufacturer IXYS Series PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 13.5mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2210pF @ 25V FET Feature - Power Dissipation (Max) 390W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer IXYS Series PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 13.5mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2210pF @ 25V FET Feature - Power Dissipation (Max) 390W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |