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Datasheet | IXTQ16N50P |
File Size | 143.25 KB |
Total Pages | 4 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | IXTQ16N50P, IXTA16N50P, IXTP16N50P |
Description | MOSFET N-CH 500V 16A TO-3P, MOSFET N-CH 500V 16A D2-PAK, MOSFET N-CH 500V 16A TO-220 |
IXTQ16N50P - IXYS
![IXTQ16N50P Datasheet Page 1](http://media.zouser.com/zouser/datasheet/sm/ixtq16n50p-0001.jpg)
![IXTQ16N50P Datasheet Page 2](http://media.zouser.com/zouser/datasheet/sm/ixtq16n50p-0002.jpg)
![IXTQ16N50P Datasheet Page 3](http://media.zouser.com/zouser/datasheet/sm/ixtq16n50p-0003.jpg)
![IXTQ16N50P Datasheet Page 4](http://media.zouser.com/zouser/datasheet/sm/ixtq16n50p-0004.jpg)
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IXTA16N50P | IXYS | MOSFET N-CH 500V 16A D2-PAK | 492 More on Order |
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IXTP16N50P | IXYS | MOSFET N-CH 500V 16A TO-220 | 610 More on Order |
URL Link
Manufacturer IXYS Series PolarHV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 400mOhm @ 8A, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |
Manufacturer IXYS Series PolarHV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 400mOhm @ 8A, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (IXTA) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer IXYS Series PolarHV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 400mOhm @ 8A, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |