Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IXTV96N25T |
| File Size | 171.02 KB |
| Total Pages | 5 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | IXTV96N25T, IXTH96N25T, IXTQ96N25T |
| Description | MOSFET N-CH 250V 96A PLUS220, MOSFET N-CH 250V 96A TO-247, MOSFET N-CH 250V 96A TO-3P |
IXTV96N25T - IXYS
The Products You May Be Interested In
 |
IXTV96N25T | IXYS | MOSFET N-CH 250V 96A PLUS220 | 308 More on Order |
 |
IXTH96N25T | IXYS | MOSFET N-CH 250V 96A TO-247 | 420 More on Order |
 |
IXTQ96N25T | IXYS | MOSFET N-CH 250V 96A TO-3P | 583 More on Order |
URL Link
|
Manufacturer IXYS Series TrenchHV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 96A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 29mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 25V FET Feature - Power Dissipation (Max) 625W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS220 Package / Case TO-220-3, Short Tab |
Manufacturer IXYS Series TrenchHV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 96A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 29mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 25V FET Feature - Power Dissipation (Max) 625W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 (IXTH) Package / Case TO-247-3 |
Manufacturer IXYS Series TrenchHV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 96A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 29mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 25V FET Feature - Power Dissipation (Max) 625W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |