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KSC1730YBU Datasheet

KSC1730YBU Cover
DatasheetKSC1730YBU
File Size41.37 KB
Total Pages4
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 4 part numbers
Associated Parts KSC1730YBU, KSC1730OTA, KSC1730OBU, KSC1730YTA
Description RF TRANS NPN 15V 1.1GHZ TO92-3, RF TRANS NPN 15V 1.1GHZ TO92-3, RF TRANS NPN 15V 1.1GHZ TO92-3, RF TRANS NPN 15V 1.1GHZ TO92-3

KSC1730YBU - ON Semiconductor

KSC1730YBU Datasheet Page 1
KSC1730YBU Datasheet Page 2
KSC1730YBU Datasheet Page 3
KSC1730YBU Datasheet Page 4

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URL Link

KSC1730YBU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

15V

Frequency - Transition

1.1GHz

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

250mW

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 5mA, 10V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

KSC1730OTA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

15V

Frequency - Transition

1.1GHz

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

250mW

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 10V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3

KSC1730OBU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

15V

Frequency - Transition

1.1GHz

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

250mW

DC Current Gain (hFE) (Min) @ Ic, Vce

70 @ 5mA, 10V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

KSC1730YTA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

15V

Frequency - Transition

1.1GHz

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

250mW

DC Current Gain (hFE) (Min) @ Ic, Vce

120 @ 5mA, 10V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3