Datasheet | MBR3580R |
File Size | 794.16 KB |
Total Pages | 3 |
Manufacturer | GeneSiC Semiconductor |
Website | |
Total Parts | This datasheet covers 9 part numbers |
Associated Parts | MBR3580R, MBR3545R, MBR35100R, MBR3580, MBR3560, MBR35100, 1N1200AR, MBR3545, MBR3560R |
Description | DIODE SCHOTTKY REV 80V DO4, DIODE SCHOTTKY REV 45V DO4, DIODE SCHOTTKY REV 100V DO4, DIODE SCHOTTKY 80V 35A DO4, DIODE SCHOTTKY 60V 35A DO4 |
MBR3580R - GeneSiC Semiconductor
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1N1200AR | GeneSiC Semiconductor | DIODE GEN PURP REV 100V 12A DO4 | 234 More on Order |
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GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 80V Current - Average Rectified (Io) 35A Voltage - Forward (Vf) (Max) @ If 840mV @ 35A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1.5mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -55°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 45V Current - Average Rectified (Io) 35A Voltage - Forward (Vf) (Max) @ If 680mV @ 35A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1.5mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -55°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 35A Voltage - Forward (Vf) (Max) @ If 840mV @ 35A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1.5mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -55°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 80V Current - Average Rectified (Io) 35A Voltage - Forward (Vf) (Max) @ If 840mV @ 35A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1.5mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -55°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 35A Voltage - Forward (Vf) (Max) @ If 750mV @ 35A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1.5mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -55°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 35A Voltage - Forward (Vf) (Max) @ If 840mV @ 35A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1.5mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -55°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 12A Voltage - Forward (Vf) (Max) @ If 1.1V @ 12A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 10µA @ 50V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -65°C ~ 200°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 45V Current - Average Rectified (Io) 35A Voltage - Forward (Vf) (Max) @ If 680mV @ 35A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1.5mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -55°C ~ 150°C |
GeneSiC Semiconductor Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 35A Voltage - Forward (Vf) (Max) @ If 750mV @ 35A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1.5mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis, Stud Mount Package / Case DO-203AA, DO-4, Stud Supplier Device Package DO-4 Operating Temperature - Junction -55°C ~ 150°C |