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MBRT40040R Datasheet

MBRT40040R Cover
DatasheetMBRT40040R
File Size722.01 KB
Total Pages3
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 8 part numbers
Associated Parts MBRT40040R, MBRT40040, MBRT40030R, MBRT40030, MBRT40020R, MBRT40020, MBRT40035R, MBRT40035
Description DIODE MODULE 40V 400A 3TOWER, DIODE MODULE 40V 400A 3TOWER, DIODE MODULE 30V 400A 3TOWER, DIODE MODULE 30V 400A 3TOWER, DIODE MODULE 20V 400A 3TOWER

MBRT40040R - GeneSiC Semiconductor

MBRT40040R Datasheet Page 1
MBRT40040R Datasheet Page 2
MBRT40040R Datasheet Page 3

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URL Link

MBRT40040R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

40V

Current - Average Rectified (Io) (per Diode)

400A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 200A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT40040

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

40V

Current - Average Rectified (Io) (per Diode)

400A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 200A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 175°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT40030R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

30V

Current - Average Rectified (Io) (per Diode)

400A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 200A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 175°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT40030

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

30V

Current - Average Rectified (Io) (per Diode)

400A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 200A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT40020R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

20V

Current - Average Rectified (Io) (per Diode)

400A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 200A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 175°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT40020

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

20V

Current - Average Rectified (Io) (per Diode)

400A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 200A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 100°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT40035R

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Anode

Diode Type

Schottky, Reverse Polarity

Voltage - DC Reverse (Vr) (Max)

35V

Current - Average Rectified (Io) (per Diode)

400A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 200A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower

MBRT40035

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Configuration

1 Pair Common Cathode

Diode Type

Schottky

Voltage - DC Reverse (Vr) (Max)

35V

Current - Average Rectified (Io) (per Diode)

400A (DC)

Voltage - Forward (Vf) (Max) @ If

750mV @ 200A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

1mA @ 20V

Operating Temperature - Junction

-55°C ~ 150°C

Mounting Type

Chassis Mount

Package / Case

Three Tower

Supplier Device Package

Three Tower