Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | MBRT500200R |
| File Size | 793.08 KB |
| Total Pages | 3 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | MBRT500200R, MBRT500200, MBRT500150R, MBRT500150 |
| Description | DIODE SCHOTTKY 200V 250A 3 TOWER, DIODE SCHOTTKY 200V 250A 3 TOWER, DIODE SCHOTTKY 150V 250A 3 TOWER, DIODE SCHOTTKY 150V 250A 3 TOWER |
MBRT500200R - GeneSiC Semiconductor
The Products You May Be Interested In
 |
MBRT500200R | GeneSiC Semiconductor | DIODE SCHOTTKY 200V 250A 3 TOWER | 228 More on Order |
 |
MBRT500200 | GeneSiC Semiconductor | DIODE SCHOTTKY 200V 250A 3 TOWER | 606 More on Order |
 |
MBRT500150R | GeneSiC Semiconductor | DIODE SCHOTTKY 150V 250A 3 TOWER | 154 More on Order |
 |
MBRT500150 | GeneSiC Semiconductor | DIODE SCHOTTKY 150V 250A 3 TOWER | 164 More on Order |
URL Link
|
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) (per Diode) 250A Voltage - Forward (Vf) (Max) @ If 920mV @ 250A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 200V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) (per Diode) 250A Voltage - Forward (Vf) (Max) @ If 920mV @ 250A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 200V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 150V Current - Average Rectified (Io) (per Diode) 250A Voltage - Forward (Vf) (Max) @ If 880mV @ 250A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 150V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 150V Current - Average Rectified (Io) (per Diode) 250A Voltage - Forward (Vf) (Max) @ If 880mV @ 250A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 150V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |