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MCH6321-TL-W Datasheet

MCH6321-TL-W Cover
DatasheetMCH6321-TL-W
File Size1,056.59 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts MCH6321-TL-W, MCH6321-TL-E
Description MOSFET P-CH 20V 4A MCPH6, MOSFET P-CH 20V 4A MCPH6

MCH6321-TL-W - ON Semiconductor

MCH6321-TL-W Datasheet Page 1
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URL Link

MCH6321-TL-W

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

83mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

4.6nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

375pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.5W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-MCPH

Package / Case

6-SMD, Flat Leads

MCH6321-TL-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

83mOhm @ 2A, 4.5V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

4.6nC @ 4.5V

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

375pF @ 10V

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

6-MCPH

Package / Case

6-SMD, Flat Leads