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MJ11030G Datasheet

MJ11030G Cover
DatasheetMJ11030G
File Size116.12 KB
Total Pages4
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 6 part numbers
Associated Parts MJ11030G, MJ11030, MJ11032, MJ11028G, MJ11033G, MJ11032G
Description TRANS NPN DARL 90V 50A TO-3, TRANS NPN DARL 90V 50A TO-3, TRANS NPN DARL 120V 50A TO3, TRANS NPN DARL 60V 50A TO3, TRANS PNP DARL 120V 50A TO3

MJ11030G - ON Semiconductor

MJ11030G Datasheet Page 1
MJ11030G Datasheet Page 2
MJ11030G Datasheet Page 3
MJ11030G Datasheet Page 4

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URL Link

MJ11030G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

50A

Voltage - Collector Emitter Breakdown (Max)

90V

Vce Saturation (Max) @ Ib, Ic

3.5V @ 500mA, 50A

Current - Collector Cutoff (Max)

2mA

DC Current Gain (hFE) (Min) @ Ic, Vce

1000 @ 25A, 5V

Power - Max

300W

Frequency - Transition

-

Operating Temperature

-55°C ~ 200°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-204AE

Supplier Device Package

TO-3

MJ11030

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

50A

Voltage - Collector Emitter Breakdown (Max)

90V

Vce Saturation (Max) @ Ib, Ic

3.5V @ 500mA, 50A

Current - Collector Cutoff (Max)

2mA

DC Current Gain (hFE) (Min) @ Ic, Vce

1000 @ 25A, 5V

Power - Max

300W

Frequency - Transition

-

Operating Temperature

-55°C ~ 200°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-204AE

Supplier Device Package

TO-3

MJ11032

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

50A

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

3.5V @ 500mA, 50A

Current - Collector Cutoff (Max)

2mA

DC Current Gain (hFE) (Min) @ Ic, Vce

1000 @ 25A, 5V

Power - Max

300W

Frequency - Transition

-

Operating Temperature

-55°C ~ 200°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-204AE

Supplier Device Package

TO-3

MJ11028G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

50A

Voltage - Collector Emitter Breakdown (Max)

60V

Vce Saturation (Max) @ Ib, Ic

3.5V @ 500mA, 50A

Current - Collector Cutoff (Max)

2mA

DC Current Gain (hFE) (Min) @ Ic, Vce

1000 @ 25A, 5V

Power - Max

300W

Frequency - Transition

-

Operating Temperature

-55°C ~ 200°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-204AE

Supplier Device Package

TO-3

MJ11033G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

PNP - Darlington

Current - Collector (Ic) (Max)

50A

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

3.5V @ 500mA, 50A

Current - Collector Cutoff (Max)

2mA

DC Current Gain (hFE) (Min) @ Ic, Vce

1000 @ 25A, 5V

Power - Max

300W

Frequency - Transition

-

Operating Temperature

-55°C ~ 200°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-204AE

Supplier Device Package

TO-3

MJ11032G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Darlington

Current - Collector (Ic) (Max)

50A

Voltage - Collector Emitter Breakdown (Max)

120V

Vce Saturation (Max) @ Ib, Ic

3.5V @ 500mA, 50A

Current - Collector Cutoff (Max)

2mA

DC Current Gain (hFE) (Min) @ Ic, Vce

1000 @ 25A, 5V

Power - Max

300W

Frequency - Transition

-

Operating Temperature

-55°C ~ 200°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-204AE

Supplier Device Package

TO-3