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MJE18006G Datasheet

MJE18006G Cover
DatasheetMJE18006G
File Size202.42 KB
Total Pages7
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts MJE18006G, MJE18006
Description TRANS NPN 450V 6A TO-220AB, TRANS NPN 450V 6A TO-220AB

MJE18006G - ON Semiconductor

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URL Link

MJE18006G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SWITCHMODE™

Transistor Type

NPN

Current - Collector (Ic) (Max)

6A

Voltage - Collector Emitter Breakdown (Max)

450V

Vce Saturation (Max) @ Ib, Ic

700mV @ 600mA, 3A

Current - Collector Cutoff (Max)

100µA

DC Current Gain (hFE) (Min) @ Ic, Vce

6 @ 3A, 1V

Power - Max

100W

Frequency - Transition

14MHz

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

MJE18006

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SWITCHMODE™

Transistor Type

NPN

Current - Collector (Ic) (Max)

6A

Voltage - Collector Emitter Breakdown (Max)

450V

Vce Saturation (Max) @ Ib, Ic

700mV @ 600mA, 3A

Current - Collector Cutoff (Max)

100µA

DC Current Gain (hFE) (Min) @ Ic, Vce

6 @ 3A, 1V

Power - Max

100W

Frequency - Transition

14MHz

Operating Temperature

-65°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220AB