Datasheet | MMIX1F160N30T |
File Size | 224.87 KB |
Total Pages | 7 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | MMIX1F160N30T |
Description | MOSFET N-CH 300V 102A SMPD |
MMIX1F160N30T - IXYS
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MMIX1F160N30T | IXYS | MOSFET N-CH 300V 102A SMPD | 456 More on Order |
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IXYS Manufacturer IXYS Series GigaMOS™, HiPerFET™, TrenchT2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 102A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 20mOhm @ 60A, 10V Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 335nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 25V FET Feature - Power Dissipation (Max) 570W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 24-SMPD Package / Case 24-PowerSMD, 21 Leads |