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MMIX1F160N30T Datasheet

MMIX1F160N30T Cover
DatasheetMMIX1F160N30T
File Size224.87 KB
Total Pages7
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts MMIX1F160N30T
Description MOSFET N-CH 300V 102A SMPD

MMIX1F160N30T - IXYS

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MMIX1F160N30T MMIX1F160N30T IXYS MOSFET N-CH 300V 102A SMPD 456

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URL Link

Manufacturer

IXYS

Series

GigaMOS™, HiPerFET™, TrenchT2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

102A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

335nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2800pF @ 25V

FET Feature

-

Power Dissipation (Max)

570W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

24-SMPD

Package / Case

24-PowerSMD, 21 Leads