Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | MPSH81_D75Z |
| File Size | 721.38 KB |
| Total Pages | 11 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 6 part numbers |
| Associated Parts | MPSH81_D75Z, MPSH81_D27Z, MPSH81_D26Z, MMBTH81_D87Z, MPSH81, MMBTH81 |
| Description | RF TRANS PNP 20V 600MHZ TO92-3, RF TRANS PNP 20V 600MHZ TO92-3, RF TRANS PNP 20V 600MHZ TO92-3, RF TRANS PNP 20V 600MHZ SOT23-3, RF TRANS PNP 20V 600MHZ TO92-3 |
MPSH81_D75Z - ON Semiconductor
The Products You May Be Interested In
 |
MPSH81_D75Z | ON Semiconductor | RF TRANS PNP 20V 600MHZ TO92-3 | 392 More on Order |
 |
MPSH81_D27Z | ON Semiconductor | RF TRANS PNP 20V 600MHZ TO92-3 | 355 More on Order |
 |
MPSH81_D26Z | ON Semiconductor | RF TRANS PNP 20V 600MHZ TO92-3 | 311 More on Order |
 |
MMBTH81_D87Z | ON Semiconductor | RF TRANS PNP 20V 600MHZ SOT23-3 | 219 More on Order |
 |
MPSH81 | ON Semiconductor | RF TRANS PNP 20V 600MHZ TO92-3 | 436 More on Order |
|
MMBTH81 | ON Semiconductor | RF TRANS PNP 20V 600MHZ SOT23-3 | 43981 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series - Transistor Type PNP Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) - Gain - Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type PNP Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) - Gain - Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type PNP Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) - Gain - Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type PNP Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) - Gain - Power - Max 225mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 (TO-236) |
Manufacturer ON Semiconductor Series - Transistor Type PNP Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) - Gain - Power - Max 350mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package TO-92-3 |
Manufacturer ON Semiconductor Series - Transistor Type PNP Voltage - Collector Emitter Breakdown (Max) 20V Frequency - Transition 600MHz Noise Figure (dB Typ @ f) - Gain - Power - Max 225mW DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V Current - Collector (Ic) (Max) 50mA Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23-3 (TO-236) |