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| Datasheet | MUR20060CTR |
| File Size | 662.33 KB |
| Total Pages | 3 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | MUR20060CTR, MUR20060CT, MUR20040CTR, MUR20040CT |
| Description | DIODE MODULE 600V 200A 2TOWER, DIODE MODULE 600V 200A 2TOWER, DIODE MODULE 400V 200A 2TOWER, DIODE MODULE 400V 200A 2TOWER |
MUR20060CTR - GeneSiC Semiconductor
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Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) (per Diode) 200A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 50A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 110ns Current - Reverse Leakage @ Vr 25µA @ 50V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) (per Diode) 200A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 50A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 110ns Current - Reverse Leakage @ Vr 25µA @ 50V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Anode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) (per Diode) 200A (DC) Voltage - Forward (Vf) (Max) @ If 1.3V @ 50A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 90ns Current - Reverse Leakage @ Vr 25µA @ 50V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 400V Current - Average Rectified (Io) (per Diode) 200A (DC) Voltage - Forward (Vf) (Max) @ If 1.3V @ 50A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 90ns Current - Reverse Leakage @ Vr 25µA @ 50V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Twin Tower Supplier Device Package Twin Tower |