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NCD57001DWR2G Datasheet

NCD57001DWR2G Cover
DatasheetNCD57001DWR2G
File Size224.42 KB
Total Pages14
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NCD57001DWR2G
Description GALVANIC ISOLATED HIGH CU

NCD57001DWR2G - ON Semiconductor

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URL Link

NCD57001DWR2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q100

Driven Configuration

Half-Bridge

Channel Type

Single

Number of Drivers

1

Gate Type

IGBT

Voltage - Supply

24V

Logic Voltage - VIL, VIH

-

Current - Peak Output (Source, Sink)

7.8A, 7.1A

Input Type

Inverting, Non-Inverting

High Side Voltage - Max (Bootstrap)

-

Rise / Fall Time (Typ)

10ns, 15ns

Operating Temperature

-40°C ~ 125°C (TJ)

Mounting Type

Surface Mount

Package / Case

16-SOIC (0.295", 7.50mm Width)

Supplier Device Package

16-SOIC