Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NDD60N360U1T4G |
| File Size | 134.69 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | NDD60N360U1T4G, NDD60N360U1-35G, NDD60N360U1-1G |
| Description | MOSFET N-CH 600V 114A DPAK, MOSFET N-CH 600V 114A IPAK, MOSFET N-CH 600V 114A IPAK |
NDD60N360U1T4G - ON Semiconductor
The Products You May Be Interested In
 |
NDD60N360U1T4G | ON Semiconductor | MOSFET N-CH 600V 114A DPAK | 246 More on Order |
 |
NDD60N360U1-35G | ON Semiconductor | MOSFET N-CH 600V 114A IPAK | 339 More on Order |
 |
NDD60N360U1-1G | ON Semiconductor | MOSFET N-CH 600V 114A IPAK | 357 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 790pF @ 50V FET Feature - Power Dissipation (Max) 114W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 790pF @ 50V FET Feature - Power Dissipation (Max) 114W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 790pF @ 50V FET Feature - Power Dissipation (Max) 114W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |