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NGTB30N60L2WG Datasheet

NGTB30N60L2WG Cover
DatasheetNGTB30N60L2WG
File Size814.2 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NGTB30N60L2WG
Description IGBT 600V 30A TO247

NGTB30N60L2WG - ON Semiconductor

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URL Link

NGTB30N60L2WG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

100A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 30A

Power - Max

225W

Switching Energy

310µJ (on), 1.14mJ (off)

Input Type

Standard

Gate Charge

166nC

Td (on/off) @ 25°C

100ns/390ns

Test Condition

300V, 30A, 30Ohm, 15V

Reverse Recovery Time (trr)

70ns

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3