Semiconductors
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| Datasheet | NGTD21T65F2WP |
| File Size | 84.25 KB |
| Total Pages | 3 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NGTD21T65F2WP, NGTD21T65F2SWK |
| Description | IGBT TRENCH FIELD STOP 650V DIE, IGBT TRENCH FIELD STOP 650V DIE |
NGTD21T65F2WP - ON Semiconductor
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Manufacturer ON Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) - Current - Collector Pulsed (Icm) 200A Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 45A Power - Max - Switching Energy - Input Type Standard Gate Charge - Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |
Manufacturer ON Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) - Current - Collector Pulsed (Icm) 200A Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 45A Power - Max - Switching Energy - Input Type Standard Gate Charge - Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Package / Case Die Supplier Device Package Die |