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NP35N04YUG-E1-AY Datasheet

NP35N04YUG-E1-AY Cover
DatasheetNP35N04YUG-E1-AY
File Size224.06 KB
Total Pages8
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts NP35N04YUG-E1-AY
Description MOSFET N-CH 40V 35A 8HSON

NP35N04YUG-E1-AY - Renesas Electronics America

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URL Link

NP35N04YUG-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

10mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2850pF @ 25V

FET Feature

-

Power Dissipation (Max)

1W (Ta), 77W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HSON

Package / Case

8-SMD, Flat Lead Exposed Pad