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| Datasheet | NP36P06KDG-E1-AY |
| File Size | 290.55 KB |
| Total Pages | 9 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | NP36P06KDG-E1-AY |
| Description | MOSFET P-CH 60V 36A TO-263 |
NP36P06KDG-E1-AY - Renesas Electronics America
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Manufacturer Renesas Electronics America Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 36A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 29.5mOhm @ 18A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 54nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 10V FET Feature - Power Dissipation (Max) 1.8W (Ta), 56W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |