Top

NP80N055MHE-S18-AY Datasheet

NP80N055MHE-S18-AY Cover
DatasheetNP80N055MHE-S18-AY
File Size292.54 KB
Total Pages12
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts NP80N055MHE-S18-AY
Description MOSFET N-CH 55V 80A TO-220

NP80N055MHE-S18-AY - Renesas Electronics America

NP80N055MHE-S18-AY Datasheet Page 1
NP80N055MHE-S18-AY Datasheet Page 2
NP80N055MHE-S18-AY Datasheet Page 3
NP80N055MHE-S18-AY Datasheet Page 4
NP80N055MHE-S18-AY Datasheet Page 5
NP80N055MHE-S18-AY Datasheet Page 6
NP80N055MHE-S18-AY Datasheet Page 7
NP80N055MHE-S18-AY Datasheet Page 8
NP80N055MHE-S18-AY Datasheet Page 9
NP80N055MHE-S18-AY Datasheet Page 10
NP80N055MHE-S18-AY Datasheet Page 11
NP80N055MHE-S18-AY Datasheet Page 12

The Products You May Be Interested In

NP80N055MHE-S18-AY NP80N055MHE-S18-AY Renesas Electronics America MOSFET N-CH 55V 80A TO-220 184

More on Order

URL Link

NP80N055MHE-S18-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

11mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3600pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 120W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3