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| Datasheet | NP80N055NDG-S18-AY |
| File Size | 346.75 KB |
| Total Pages | 12 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | NP80N055NDG-S18-AY |
| Description | MOSFET N-CH 55V 80A TO-262 |
NP80N055NDG-S18-AY - Renesas Electronics America
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Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.9mOhm @ 40A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6900pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta), 115W (Tc) Operating Temperature 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-262 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |