Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NP82N055PUG-E1-AY |
| File Size | 296.27 KB |
| Total Pages | 9 |
| Manufacturer | Renesas Electronics America |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | NP82N055PUG-E1-AY |
| Description | MOSFET N-CH 55V 82A TO-263 |
NP82N055PUG-E1-AY - Renesas Electronics America
The Products You May Be Interested In
 |
NP82N055PUG-E1-AY | Renesas Electronics America | MOSFET N-CH 55V 82A TO-263 | 297 More on Order |
URL Link
www.zouser.com/datasheet/NP82N055PUG-E1-AY
|
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 82A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.2mOhm @ 41A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9600pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta), 143W (Tc) Operating Temperature 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |