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| Datasheet | NRVHPD660T4G |
| File Size | 67.41 KB |
| Total Pages | 5 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NRVHPD660T4G, NHPD660T4G |
| Description | DIODE GEN PURP 600V 6A DPAK, DIODE GEN PURP 600V 6A DPAK |
NRVHPD660T4G - ON Semiconductor
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Manufacturer ON Semiconductor Series Automotive, AEC-Q101 Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 6A Voltage - Forward (Vf) (Max) @ If 3V @ 6A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 50ns Current - Reverse Leakage @ Vr 30µA @ 600V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package DPAK Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer ON Semiconductor Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 6A Voltage - Forward (Vf) (Max) @ If 3V @ 6A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 30ns Current - Reverse Leakage @ Vr 30µA @ 600V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package DPAK Operating Temperature - Junction -65°C ~ 175°C |