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| Datasheet | NRVTSM260ET1G |
| File Size | 63.34 KB |
| Total Pages | 5 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NRVTSM260ET1G, NRVTSM260ET3G |
| Description | DIODE SCHOTTKY 60V 2A POWERMITE, DIODE SCHOTTKY 60V 2A POWERMITE |
NRVTSM260ET1G - ON Semiconductor
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Manufacturer ON Semiconductor Series Automotive, AEC-Q101 Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 650mV @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 12µA @ 60V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-216AA Supplier Device Package Powermite Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 2A Voltage - Forward (Vf) (Max) @ If 650mV @ 2A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 12µA @ 60V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case DO-216AA Supplier Device Package Powermite Operating Temperature - Junction -55°C ~ 175°C |