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NSBA123TDP6T5G Datasheet

NSBA123TDP6T5G Cover
DatasheetNSBA123TDP6T5G
File Size119.03 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NSBA123TDP6T5G
Description TRANS 2PNP PREBIAS 0.408W SOT963

NSBA123TDP6T5G - ON Semiconductor

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NSBA123TDP6T5G NSBA123TDP6T5G ON Semiconductor TRANS 2PNP PREBIAS 0.408W SOT963 336

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URL Link

NSBA123TDP6T5G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 PNP - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

2.2kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

408mW

Mounting Type

Surface Mount

Package / Case

SOT-963

Supplier Device Package

SOT-963