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NSBC143TDXV6T1G Datasheet

NSBC143TDXV6T1G Cover
DatasheetNSBC143TDXV6T1G
File Size105.77 KB
Total Pages6
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 4 part numbers
Associated Parts NSBC143TDXV6T1G, NSBC143TDXV6T5G, SMUN5216DW1T1G, MUN5216DW1T1G
Description TRANS PREBIAS DUAL NPN SOT563, TRANS PREBIAS DUAL NPN SOT563, TRANS 2NPN PREBIAS 0.187W SOT363, TRANS 2NPN PREBIAS 0.25W SOT363

NSBC143TDXV6T1G - ON Semiconductor

NSBC143TDXV6T1G Datasheet Page 1
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NSBC143TDXV6T5G NSBC143TDXV6T5G ON Semiconductor TRANS PREBIAS DUAL NPN SOT563 249

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SMUN5216DW1T1G SMUN5216DW1T1G ON Semiconductor TRANS 2NPN PREBIAS 0.187W SOT363 576

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MUN5216DW1T1G MUN5216DW1T1G ON Semiconductor TRANS 2NPN PREBIAS 0.25W SOT363 61535

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URL Link

NSBC143TDXV6T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 1mA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

500mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-563

NSBC143TDXV6T5G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 1mA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

500mW

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-666

Supplier Device Package

SOT-563

SMUN5216DW1T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 1mA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

187mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-88/SC70-6/SOT-363

MUN5216DW1T1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

2 NPN - Pre-Biased (Dual)

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

4.7kOhms

Resistor - Emitter Base (R2)

-

DC Current Gain (hFE) (Min) @ Ic, Vce

160 @ 5mA, 10V

Vce Saturation (Max) @ Ib, Ic

250mV @ 1mA, 10mA

Current - Collector Cutoff (Max)

500nA

Frequency - Transition

-

Power - Max

250mW

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-88/SC70-6/SOT-363