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NTA4153NT1 Datasheet

NTA4153NT1 Cover
DatasheetNTA4153NT1
File Size232.68 KB
Total Pages7
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 6 part numbers
Associated Parts NTA4153NT1, NVA4153NT1G, NTA4153NT3G, NVE4153NT1G, NTE4153NT1G, NTA4153NT1G
Description MOSFET N-CH 20V 915MA SOT-416, MOSFET N-CH 20V 0.915A SC75, MOSFET N-CH 20V 915MA SOT-416, MOSFET N-CH 20V 0.915A SC89-3, MOSFET N-CH 20V 915MA SC-89

NTA4153NT1 - ON Semiconductor

NTA4153NT1 Datasheet Page 1
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URL Link

NTA4153NT1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

915mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

230mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.82nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

110pF @ 16V

FET Feature

-

Power Dissipation (Max)

300mW (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-75, SOT-416

Package / Case

SC-75, SOT-416

NVA4153NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

915mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

230mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.82nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

110pF @ 16V

FET Feature

-

Power Dissipation (Max)

300mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-75, SOT-416

Package / Case

SC-75, SOT-416

NTA4153NT3G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

915mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

230mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.82nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

110pF @ 16V

FET Feature

-

Power Dissipation (Max)

300mW (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-75, SOT-416

Package / Case

SC-75, SOT-416

NVE4153NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

915mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

230mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.82nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

110pF @ 16V

FET Feature

-

Power Dissipation (Max)

300mW (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89

Package / Case

SC-89, SOT-490

NTE4153NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

915mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

230mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.82nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

110pF @ 16V

FET Feature

-

Power Dissipation (Max)

300mW (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-89-3

Package / Case

SC-89, SOT-490

NTA4153NT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

915mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

230mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id

1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

1.82nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

110pF @ 16V

FET Feature

-

Power Dissipation (Max)

300mW (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-75, SOT-416

Package / Case

SC-75, SOT-416