Datasheet | NTB75N03L09G |
File Size | 72.59 KB |
Total Pages | 8 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 5 part numbers |
Associated Parts | NTB75N03L09G, NTP75N03L09G, NTB75N03L09T4G, NTP75N03L09, NTB75N03L09T4 |
Description | MOSFET N-CH 30V 75A D2PAK, MOSFET N-CH 30V 75A TO220AB, MOSFET N-CH 30V 75A D2PAK, MOSFET N-CH 30V 75A TO220AB, MOSFET N-CH 30V 75A D2PAK |
NTB75N03L09G - ON Semiconductor
The Products You May Be Interested In
NTB75N03L09G | ON Semiconductor | MOSFET N-CH 30V 75A D2PAK | 622 More on Order |
|
NTP75N03L09G | ON Semiconductor | MOSFET N-CH 30V 75A TO220AB | 225 More on Order |
|
NTB75N03L09T4G | ON Semiconductor | MOSFET N-CH 30V 75A D2PAK | 175 More on Order |
|
NTP75N03L09 | ON Semiconductor | MOSFET N-CH 30V 75A TO220AB | 213 More on Order |
|
NTB75N03L09T4 | ON Semiconductor | MOSFET N-CH 30V 75A D2PAK | 346 More on Order |
URL Link
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 8mOhm @ 37.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 75nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5635pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 8mOhm @ 37.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 75nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5635pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 8mOhm @ 37.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 75nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5635pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 8mOhm @ 37.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 75nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5635pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 8mOhm @ 37.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 75nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5635pF @ 25V FET Feature - Power Dissipation (Max) 2.5W (Ta), 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |