Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NTB75N06LT4G |
| File Size | 79.4 KB |
| Total Pages | 7 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 5 part numbers |
| Associated Parts | NTB75N06LT4G, NTB75N06LG, NTB75N06L, NTP75N06L, NTB75N06LT4 |
| Description | MOSFET N-CH 60V 75A D2PAK, MOSFET N-CH 60V 75A D2PAK, MOSFET N-CH 60V 75A D2PAK, MOSFET N-CH 60V 75A TO-220AB, MOSFET N-CH 60V 75A D2PAK |
NTB75N06LT4G - ON Semiconductor
The Products You May Be Interested In
 |
NTB75N06LT4G | ON Semiconductor | MOSFET N-CH 60V 75A D2PAK | 489 More on Order |
 |
NTB75N06LG | ON Semiconductor | MOSFET N-CH 60V 75A D2PAK | 206 More on Order |
 |
NTB75N06L | ON Semiconductor | MOSFET N-CH 60V 75A D2PAK | 575 More on Order |
 |
NTP75N06L | ON Semiconductor | MOSFET N-CH 60V 75A TO-220AB | 181 More on Order |
 |
NTB75N06LT4 | ON Semiconductor | MOSFET N-CH 60V 75A D2PAK | 272 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 75A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 11mOhm @ 37.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 92nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4370pF @ 25V FET Feature - Power Dissipation (Max) 2.4W (Ta), 214W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 75A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 11mOhm @ 37.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 92nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4370pF @ 25V FET Feature - Power Dissipation (Max) 2.4W (Ta), 214W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 75A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 11mOhm @ 37.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 92nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4370pF @ 25V FET Feature - Power Dissipation (Max) 2.4W (Ta), 214W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 75A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 11mOhm @ 37.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 92nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4370pF @ 25V FET Feature - Power Dissipation (Max) 2.4W (Ta), 214W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 75A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 11mOhm @ 37.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 92nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4370pF @ 25V FET Feature - Power Dissipation (Max) 2.4W (Ta), 214W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |