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| Datasheet | NTD3055L170G |
| File Size | 146.7 KB |
| Total Pages | 10 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 7 part numbers |
| Associated Parts | NTD3055L170G, NTD3055L170-1G, NTD3055L170, NTD3055L170-001, NVD3055L170T4G-VF01, NVD3055L170T4G, NTD3055L170T4G |
| Description | MOSFET N-CH 60V 9A DPAK, MOSFET N-CH 60V 9A IPAK, MOSFET N-CH 60V 9A DPAK, MOSFET N-CH 60V 9A IPAK, MOSFET N-CH 60V 9A DPAK |
NTD3055L170G - ON Semiconductor
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 170mOhm @ 4.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 275pF @ 25V FET Feature - Power Dissipation (Max) 1.5W (Ta), 28.5W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 170mOhm @ 4.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 275pF @ 25V FET Feature - Power Dissipation (Max) 1.5W (Ta), 28.5W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 170mOhm @ 4.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 275pF @ 25V FET Feature - Power Dissipation (Max) 1.5W (Ta), 28.5W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 170mOhm @ 4.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 275pF @ 25V FET Feature - Power Dissipation (Max) 1.5W (Ta), 28.5W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 170mOhm @ 4.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 275pF @ 25V FET Feature - Power Dissipation (Max) 28.5W (Ta) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 170mOhm @ 4.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 275pF @ 25V FET Feature - Power Dissipation (Max) 1.5W (Ta), 28.5W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 9A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 170mOhm @ 4.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 275pF @ 25V FET Feature - Power Dissipation (Max) 1.5W (Ta), 28.5W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |