Datasheet | NTD4813N-35G |
File Size | 302.71 KB |
Total Pages | 8 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | NTD4813N-35G, NTD4813N-1G, NTD4813NT4G |
Description | MOSFET N-CH 30V 7.6A IPAK, MOSFET N-CH 30V 7.6A IPAK, MOSFET N-CH 30V 7.6A DPAK |
NTD4813N-35G - ON Semiconductor
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ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7.6A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V Rds On (Max) @ Id, Vgs 13mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.9nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 860pF @ 12V FET Feature - Power Dissipation (Max) 1.27W (Ta), 35.3W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Stub Leads, IPak |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7.6A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V Rds On (Max) @ Id, Vgs 13mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.9nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 860pF @ 12V FET Feature - Power Dissipation (Max) 1.27W (Ta), 35.3W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
ON Semiconductor Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7.6A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V Rds On (Max) @ Id, Vgs 13mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.9nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 860pF @ 12V FET Feature - Power Dissipation (Max) 1.27W (Ta), 35.3W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |