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Datasheet | NTD4959NHT4G |
File Size | 146.83 KB |
Total Pages | 8 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | NTD4959NHT4G, NTD4959NH-35G, NTD4959NH-1G |
Description | MOSFET N-CH 30V 9A TP-FA, MOSFET N-CH 30V 9A IPAK, MOSFET N-CH 30V 9A IPAK |
NTD4959NHT4G - ON Semiconductor
![NTD4959NHT4G Datasheet Page 1](http://media.zouser.com/zouser/datasheet/sm/ntd4959nht4g-0001.jpg)
![NTD4959NHT4G Datasheet Page 2](http://media.zouser.com/zouser/datasheet/sm/ntd4959nht4g-0002.jpg)
![NTD4959NHT4G Datasheet Page 3](http://media.zouser.com/zouser/datasheet/sm/ntd4959nht4g-0003.jpg)
![NTD4959NHT4G Datasheet Page 4](http://media.zouser.com/zouser/datasheet/sm/ntd4959nht4g-0004.jpg)
![NTD4959NHT4G Datasheet Page 5](http://media.zouser.com/zouser/datasheet/sm/ntd4959nht4g-0005.jpg)
![NTD4959NHT4G Datasheet Page 6](http://media.zouser.com/zouser/datasheet/sm/ntd4959nht4g-0006.jpg)
![NTD4959NHT4G Datasheet Page 7](http://media.zouser.com/zouser/datasheet/sm/ntd4959nht4g-0007.jpg)
![NTD4959NHT4G Datasheet Page 8](http://media.zouser.com/zouser/datasheet/sm/ntd4959nht4g-0008.jpg)
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NTD4959NH-35G | ON Semiconductor | MOSFET N-CH 30V 9A IPAK | 653 More on Order |
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NTD4959NH-1G | ON Semiconductor | MOSFET N-CH 30V 9A IPAK | 242 More on Order |
URL Link
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 11.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2155pF @ 12V FET Feature - Power Dissipation (Max) 1.3W (Ta), 52W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 11.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2155pF @ 12V FET Feature - Power Dissipation (Max) 1.3W (Ta), 52W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Stub Leads, IPak |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9A (Ta), 58A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 11.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2155pF @ 12V FET Feature - Power Dissipation (Max) 1.3W (Ta), 52W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |