Semiconductors
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| Datasheet | NTDV18N06LT4G |
| File Size | 140.45 KB |
| Total Pages | 7 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 7 part numbers |
| Associated Parts | NTDV18N06LT4G, NTD18N06LG, NTD18N06L-1G, NTD18N06L, NTD18N06L-001, NTD18N06LT4, NTD18N06LT4G |
| Description | MOSFET N-CH 60V 18A DPAK, MOSFET N-CH 60V 18A DPAK, MOSFET N-CH 60V 18A IPAK, MOSFET N-CH 60V 18A DPAK, MOSFET N-CH 60V 18A IPAK |
NTDV18N06LT4G - ON Semiconductor
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 18A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 65mOhm @ 9A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 675pF @ 25V FET Feature - Power Dissipation (Max) 2.1W (Ta), 55W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 18A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 65mOhm @ 9A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 675pF @ 25V FET Feature - Power Dissipation (Max) 2.1W (Ta), 55W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 18A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 65mOhm @ 9A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 675pF @ 25V FET Feature - Power Dissipation (Max) 2.1W (Ta), 55W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 18A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 65mOhm @ 9A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 675pF @ 25V FET Feature - Power Dissipation (Max) 2.1W (Ta), 55W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 18A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 65mOhm @ 9A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 675pF @ 25V FET Feature - Power Dissipation (Max) 2.1W (Ta), 55W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 18A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 65mOhm @ 9A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 675pF @ 25V FET Feature - Power Dissipation (Max) 2.1W (Ta), 55W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 18A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 65mOhm @ 9A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 675pF @ 25V FET Feature - Power Dissipation (Max) 2.1W (Ta), 55W (Tj) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |