Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NTHD3101FT3G |
| File Size | 130.37 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | NTHD3101FT3G, NTHD3101FT3, NTHD3101FT1G |
| Description | MOSFET P-CH 20V 3.2A CHIPFET, MOSFET P-CH 20V 3.2A CHIPFET, MOSFET P-CH 20V 3.2A CHIPFET |
NTHD3101FT3G - ON Semiconductor
The Products You May Be Interested In
 |
NTHD3101FT3G | ON Semiconductor | MOSFET P-CH 20V 3.2A CHIPFET | 372 More on Order |
 |
NTHD3101FT3 | ON Semiconductor | MOSFET P-CH 20V 3.2A CHIPFET | 399 More on Order |
 |
NTHD3101FT1G | ON Semiconductor | MOSFET P-CH 20V 3.2A CHIPFET | 4298 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.2A (Tj) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 80mOhm @ 3.2A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 680pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package ChipFET™ Package / Case 8-SMD, Flat Lead |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.2A (Tj) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 80mOhm @ 3.2A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 680pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package ChipFET™ Package / Case 8-SMD, Flat Lead |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.2A (Tj) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 80mOhm @ 3.2A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 680pF @ 10V FET Feature Schottky Diode (Isolated) Power Dissipation (Max) 1.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package ChipFET™ Package / Case 8-SMD, Flat Lead |