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Datasheet | NTJD1155LT1 |
File Size | 127.3 KB |
Total Pages | 6 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | NTJD1155LT1, NTJD1155LT2G, NTJD1155LT1G |
Description | MOSFET N/P-CH 8V 1.3A SOT-363, MOSFET N/P-CH SC-88-6, MOSFET N/P-CH 8V 1.3A SOT-363 |
NTJD1155LT1 - ON Semiconductor
![NTJD1155LT1 Datasheet Page 1](http://media.zouser.com/zouser/datasheet/sm/ntjd1155lt1-0001.jpg)
![NTJD1155LT1 Datasheet Page 2](http://media.zouser.com/zouser/datasheet/sm/ntjd1155lt1-0002.jpg)
![NTJD1155LT1 Datasheet Page 3](http://media.zouser.com/zouser/datasheet/sm/ntjd1155lt1-0003.jpg)
![NTJD1155LT1 Datasheet Page 4](http://media.zouser.com/zouser/datasheet/sm/ntjd1155lt1-0004.jpg)
![NTJD1155LT1 Datasheet Page 5](http://media.zouser.com/zouser/datasheet/sm/ntjd1155lt1-0005.jpg)
![NTJD1155LT1 Datasheet Page 6](http://media.zouser.com/zouser/datasheet/sm/ntjd1155lt1-0006.jpg)
The Products You May Be Interested In
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NTJD1155LT2G | ON Semiconductor | MOSFET N/P-CH SC-88-6 | 357 More on Order |
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NTJD1155LT1G | ON Semiconductor | MOSFET N/P-CH 8V 1.3A SOT-363 | 59534 More on Order |
URL Link
Manufacturer ON Semiconductor Series - FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 1.3A Rds On (Max) @ Id, Vgs 175mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max 400mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-88/SC70-6/SOT-363 |
Manufacturer ON Semiconductor Series * FET Type - FET Feature - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type - Package / Case - Supplier Device Package - |
Manufacturer ON Semiconductor Series - FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 1.3A Rds On (Max) @ Id, Vgs 175mOhm @ 1.2A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max 400mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363 Supplier Device Package SC-88/SC70-6/SOT-363 |