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NTK3139PT5G Datasheet

NTK3139PT5G Cover
DatasheetNTK3139PT5G
File Size129.67 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts NTK3139PT5G, NTK3139PT1G
Description MOSFET P-CH 20V 660MA SOT-723, MOSFET P-CH 20V 0.66A SOT-723

NTK3139PT5G - ON Semiconductor

NTK3139PT5G Datasheet Page 1
NTK3139PT5G Datasheet Page 2
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NTK3139PT5G Datasheet Page 5

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URL Link

NTK3139PT5G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

660mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

480mOhm @ 780mA, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

170pF @ 16V

FET Feature

-

Power Dissipation (Max)

310mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-723

Package / Case

SOT-723

NTK3139PT1G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

660mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

480mOhm @ 780mA, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

170pF @ 16V

FET Feature

-

Power Dissipation (Max)

310mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-723

Package / Case

SOT-723