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| Datasheet | NTMD6601NR2G |
| File Size | 95.07 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | NTMD6601NR2G |
| Description | MOSFET 2N-CH 80V 1.1A 8SOIC |
NTMD6601NR2G - ON Semiconductor
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NTMD6601NR2G | ON Semiconductor | MOSFET 2N-CH 80V 1.1A 8SOIC | 396 More on Order |
URL Link
www.zouser.com/datasheet/NTMD6601NR2G
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Manufacturer ON Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 1.1A Rds On (Max) @ Id, Vgs 215mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V Power - Max 600mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOIC |