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| Datasheet | NTMFS4847NAT1G |
| File Size | 126.98 KB |
| Total Pages | 7 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | NTMFS4847NAT1G, NTMFS4847NT3G, NTMFS4847NT1G, NTMFS4847NAT3G |
| Description | MOSFET N-CH 30V 11.5A SO-8FL, MOSFET N-CH 30V 11.5A SO-8FL, MOSFET N-CH 30V 11.5A SO-8FL, MOSFET N-CH 30V 11.5A SO-8FL |
NTMFS4847NAT1G - ON Semiconductor
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11.5A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V Rds On (Max) @ Id, Vgs 4.1mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 2614pF @ 12V FET Feature - Power Dissipation (Max) 880mW (Ta), 48.4W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN, 5 Leads |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11.5A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V Rds On (Max) @ Id, Vgs 4.1mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 2614pF @ 12V FET Feature - Power Dissipation (Max) 880mW (Ta), 48.4W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN, 5 Leads |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11.5A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V Rds On (Max) @ Id, Vgs 4.1mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 2614pF @ 12V FET Feature - Power Dissipation (Max) 880mW (Ta), 48.4W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN, 5 Leads |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11.5A (Ta), 85A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V Rds On (Max) @ Id, Vgs 4.1mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 2614pF @ 12V FET Feature - Power Dissipation (Max) 880mW (Ta), 48.4W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN, 5 Leads |