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| Datasheet | NTMFS5C404NLTWFT1G |
| File Size | 133.77 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 8 part numbers |
| Associated Parts | NTMFS5C404NLTWFT1G, NTMFS5C404NLTT1G, NTMFS5C404NLTWFT3G, NTMFS5C404NLTT3G, NTMFS5C410NLTWFT1G, NTMFS5C410NLTT1G, NTMFS5C410NLTWFT3G, NTMFS5C410NLTT3G |
| Description | MOSFET N-CH 40V 352A SO8FL, MOSFET N-CH 40V 352A SO8FL, MOSFET N-CH 40V 352A SO8FL, MOSFET N-CH 40V 352A SO8FL, MOSFET N-CH 40V 312A SO8FL |
NTMFS5C404NLTWFT1G - ON Semiconductor
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.75mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 181nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 12168pF @ 25V FET Feature - Power Dissipation (Max) 3.9W (Ta), 200W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.75mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 181nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 12168pF @ 25V FET Feature - Power Dissipation (Max) 3.9W (Ta), 200W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.75mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 181nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 12168pF @ 25V FET Feature - Power Dissipation (Max) 3.9W (Ta), 200W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.75mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 181nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 12168pF @ 25V FET Feature - Power Dissipation (Max) 3.9W (Ta), 200W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 50A (Ta), 330A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.9mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8862pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 167W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 50A (Ta), 330A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.9mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8862pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 167W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 50A (Ta), 330A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.9mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8862pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 167W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 50A (Ta), 330A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 0.9mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8862pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 167W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |