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NTMS4101PR2 Datasheet

NTMS4101PR2 Cover
DatasheetNTMS4101PR2
File Size166.04 KB
Total Pages5
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NTMS4101PR2
Description MOSFET P-CH 20V 6.9A 8-SOIC

NTMS4101PR2 - ON Semiconductor

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NTMS4101PR2 NTMS4101PR2 ON Semiconductor MOSFET P-CH 20V 6.9A 8-SOIC 490

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URL Link

NTMS4101PR2

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

6.9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

19mOhm @ 6.9A, 4.5V

Vgs(th) (Max) @ Id

450mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

3200pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.38W (Tj)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)