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NTMS4N01R2G Datasheet

NTMS4N01R2G Cover
DatasheetNTMS4N01R2G
File Size77.81 KB
Total Pages6
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NTMS4N01R2G
Description MOSFET N-CH 20V 3.3A 8-SOIC

NTMS4N01R2G - ON Semiconductor

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NTMS4N01R2G NTMS4N01R2G ON Semiconductor MOSFET N-CH 20V 3.3A 8-SOIC 267

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URL Link

NTMS4N01R2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

40mOhm @ 4.2A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

1200pF @ 10V

FET Feature

-

Power Dissipation (Max)

770mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)