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NTMYS2D2N06CLTWG Datasheet

NTMYS2D2N06CLTWG Cover
DatasheetNTMYS2D2N06CLTWG
File Size182.38 KB
Total Pages6
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts NTMYS2D2N06CLTWG
Description TRENCH 6 40V SL NFET

NTMYS2D2N06CLTWG - ON Semiconductor

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URL Link

NTMYS2D2N06CLTWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

31A (Ta), 185A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2V @ 180µA

Gate Charge (Qg) (Max) @ Vgs

69nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4850pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.9W (Ta), 134W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

LFPAK4 (5x6)

Package / Case

SOT-1023, 4-LFPAK