Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NTR0202PLT3G |
| File Size | 124.32 KB |
| Total Pages | 5 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | NTR0202PLT3G, NTR0202PLT1, NVTR0202PLT1G, NTR0202PLT1G |
| Description | MOSFET P-CH 20V 400MA SOT-23, MOSFET P-CH 20V 400MA SOT-23, MOSFET P-CH 20V 0.4A SOT23, MOSFET P-CH 20V 400MA SOT-23 |
NTR0202PLT3G - ON Semiconductor
The Products You May Be Interested In
 |
NTR0202PLT3G | ON Semiconductor | MOSFET P-CH 20V 400MA SOT-23 | 587 More on Order |
 |
NTR0202PLT1 | ON Semiconductor | MOSFET P-CH 20V 400MA SOT-23 | 185 More on Order |
 |
NVTR0202PLT1G | ON Semiconductor | MOSFET P-CH 20V 0.4A SOT23 | 487 More on Order |
 |
NTR0202PLT1G | ON Semiconductor | MOSFET P-CH 20V 400MA SOT-23 | 103066 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 800mOhm @ 200mA, 10V Vgs(th) (Max) @ Id 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.18nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 70pF @ 5V FET Feature - Power Dissipation (Max) 225mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 800mOhm @ 200mA, 10V Vgs(th) (Max) @ Id 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.18nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 70pF @ 5V FET Feature - Power Dissipation (Max) 225mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 800mOhm @ 200mA, 10V Vgs(th) (Max) @ Id 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.18nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 70pF @ 5V FET Feature - Power Dissipation (Max) 225mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 400mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 800mOhm @ 200mA, 10V Vgs(th) (Max) @ Id 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.18nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 70pF @ 5V FET Feature - Power Dissipation (Max) 225mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3 |