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| Datasheet | NTTFS4C06NTAG |
| File Size | 136.97 KB |
| Total Pages | 7 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NTTFS4C06NTAG, NTTFS4C06NTWG |
| Description | MOSFET N-CH 30V 65A U8FL, MOSFET N-CH 30V 65A U8FL |
NTTFS4C06NTAG - ON Semiconductor
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11A (Ta), 67A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.2mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3366pF @ 15V FET Feature - Power Dissipation (Max) 810mW (Ta), 31W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-WDFN (3.3x3.3) Package / Case 8-PowerWDFN |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11A (Ta), 67A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.2mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3366pF @ 15V FET Feature - Power Dissipation (Max) 810mW (Ta), 31W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-WDFN (3.3x3.3) Package / Case 8-PowerWDFN |