Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NVD4804NT4G |
| File Size | 142.79 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | NVD4804NT4G, NTD4804N-35G, NTD4804N-1G, NTD4804NT4G |
| Description | MOSFET N-CH 30V 14A DPAK, MOSFET N-CH 30V 14.5A IPAK, MOSFET N-CH 30V 14.5A IPAK, MOSFET N-CH 30V 14.5A DPAK |
NVD4804NT4G - ON Semiconductor
The Products You May Be Interested In
 |
NVD4804NT4G | ON Semiconductor | MOSFET N-CH 30V 14A DPAK | 373 More on Order |
 |
NTD4804N-35G | ON Semiconductor | MOSFET N-CH 30V 14.5A IPAK | 238 More on Order |
 |
NTD4804N-1G | ON Semiconductor | MOSFET N-CH 30V 14.5A IPAK | 161 More on Order |
 |
NTD4804NT4G | ON Semiconductor | MOSFET N-CH 30V 14.5A DPAK | 440 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 14.5A (Ta), 124A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V Rds On (Max) @ Id, Vgs 4mOhm @ 30A, 11.5V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4490pF @ 12V FET Feature - Power Dissipation (Max) 1.43W (Ta), 107W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 14.5A (Ta), 124A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V Rds On (Max) @ Id, Vgs 4mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4490pF @ 12V FET Feature - Power Dissipation (Max) 1.43W (Ta), 107W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Stub Leads, IPak |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 14.5A (Ta), 124A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V Rds On (Max) @ Id, Vgs 4mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4490pF @ 12V FET Feature - Power Dissipation (Max) 1.43W (Ta), 107W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 14.5A (Ta), 124A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V Rds On (Max) @ Id, Vgs 4mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 40nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4490pF @ 12V FET Feature - Power Dissipation (Max) 1.43W (Ta), 107W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |