Semiconductors
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| Datasheet | NVGS5120PT1G |
| File Size | 124.75 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NVGS5120PT1G, NTGS5120PT1G |
| Description | MOSFET P-CH 60V 1.8A 6TSOP, MOSFET P-CH 60V 1.8A 6-TSOP |
NVGS5120PT1G - ON Semiconductor
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 111mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18.1nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 942pF @ 30V FET Feature - Power Dissipation (Max) 600mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 111mOhm @ 2.9A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18.1nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 942pF @ 30V FET Feature - Power Dissipation (Max) 600mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 |