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| Datasheet | NVMFS6B14NLWFT3G |
| File Size | 79.12 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 4 part numbers |
| Associated Parts | NVMFS6B14NLWFT3G, NVMFS6B14NLT3G, NVMFS6B14NLT1G, NVMFS6B14NLWFT1G |
| Description | MOSFET N-CH 100V 11A 5DFN, MOSFET N-CH 100V 11A 5DFN, MOSFET N-CH 100V 11A DFN5, MOSFET N-CH 100V 11A DFN5 |
NVMFS6B14NLWFT3G - ON Semiconductor
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Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 11A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 13mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 94W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN, 5 Leads |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 11A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 13mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 94W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN, 5 Leads |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 11A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 13mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 94W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 11A (Ta), 55A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 13mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 25V FET Feature - Power Dissipation (Max) 3.8W (Ta), 94W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN |