Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | NVMFS6H800NWFT1G |
| File Size | 137.71 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | NVMFS6H800NWFT1G, NVMFS6H800NT1G |
| Description | TRENCH 8 80V NFET, TRENCH 8 80V NFET |
NVMFS6H800NWFT1G - ON Semiconductor
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URL Link
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Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 28A (Ta), 203A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.1mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 330µA Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5530pF @ 40V FET Feature - Power Dissipation (Max) 3.8W (Ta), 200W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN, 5 Leads |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 28A (Ta), 203A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.1mOhm @ 50A, 10V Vgs(th) (Max) @ Id 4V @ 330µA Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5530pF @ 40V FET Feature - Power Dissipation (Max) 3.8W (Ta), 200W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 5-DFN (5x6) (8-SOFL) Package / Case 8-PowerTDFN, 5 Leads |