Top

NVTFS4C06NWFTWG Datasheet

NVTFS4C06NWFTWG Cover
DatasheetNVTFS4C06NWFTWG
File Size140.83 KB
Total Pages6
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 4 part numbers
Associated Parts NVTFS4C06NWFTWG, NVTFS4C06NTAG, NVTFS4C06NTWG, NVTFS4C06NWFTAG
Description MOSFET N-CH 30V 71A U8FL, MOSFET N-CH 30V 71A U8FL, MOSFET N-CH 30V 71A U8FL, MOSFET N-CH 30V 71A U8FL

NVTFS4C06NWFTWG - ON Semiconductor

NVTFS4C06NWFTWG Datasheet Page 1
NVTFS4C06NWFTWG Datasheet Page 2
NVTFS4C06NWFTWG Datasheet Page 3
NVTFS4C06NWFTWG Datasheet Page 4
NVTFS4C06NWFTWG Datasheet Page 5
NVTFS4C06NWFTWG Datasheet Page 6

The Products You May Be Interested In

NVTFS4C06NWFTWG NVTFS4C06NWFTWG ON Semiconductor MOSFET N-CH 30V 71A U8FL 332

More on Order

NVTFS4C06NTAG NVTFS4C06NTAG ON Semiconductor MOSFET N-CH 30V 71A U8FL 530

More on Order

NVTFS4C06NTWG NVTFS4C06NTWG ON Semiconductor MOSFET N-CH 30V 71A U8FL 252

More on Order

NVTFS4C06NWFTAG NVTFS4C06NWFTAG ON Semiconductor MOSFET N-CH 30V 71A U8FL 590

More on Order

URL Link

NVTFS4C06NWFTWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

21A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1683pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 37W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WDFN (3.3x3.3)

Package / Case

8-PowerWDFN

NVTFS4C06NTAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

21A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1683pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 37W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WDFN (3.3x3.3)

Package / Case

8-PowerWDFN

NVTFS4C06NTWG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

21A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1683pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 37W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WDFN (3.3x3.3)

Package / Case

8-PowerWDFN

NVTFS4C06NWFTAG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

21A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

26nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1683pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 37W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-WDFN (3.3x3.3)

Package / Case

8-PowerWDFN